Decomposition of tantalum oxide and solvent extraction of tantalum
نویسندگان
چکیده
منابع مشابه
Porous tantalum and tantalum oxide nanoparticles for regenerative medicine.
For centuries, inflammatory/foreign body reactions have plagued the attempts of clinicians to use metals for tissue and bone reconstructions. Since corrosion contributes to the rejection of metal by the body, an extremely bioinert metal - tantalum - has been successfully used in medicine. The outstanding biocompatibility and flexibility of tantalum established the basis for a growing cadre of c...
متن کاملTantalum Oxide Coatings as Candidate Environmental Barriers
Tantalum (Ta) oxide, due to its high-temperature capabilities and thermal expansion coefficient similar to silicon nitride, is a promising candidate for environmental barriers for silicon (Si) nitride-based ceramics. This paper focuses on the development of plasma-sprayed Ta oxide as an environmental barrier coating for silicon nitride. Using a D-optimal design of experiments, plasma-spray proc...
متن کاملTantalizing tantalum.
Element 73 was first extracted from mineral samples and described in 1802 by the Swedish chemist Anders Ekeberg. He chose the name tantalum because “when placed in the midst of acids it is incapable of taking any of them up and saturating itself with them”, in a manner reminiscent of the Greek mythological king Tantalus (pictured) who couldn’t eat or drink anything despite being surrounded by f...
متن کاملsynthesis of sulfides from alcohols and thiols in solvent-freeconditions and deoxygenation of sulfoxides
کاتالیست یک سنتز جدید برای تیواترها توصیف شده است. واکنش الکل ها با آریل، هتروآریل و آلکیل تیو ل ها درحضور 1،3،5- تری آزو- 2،4،6- تری فسفرین-2،2،4،4،6،6 هگزاکلراید ((tapc به عنوان یک کاتالیست موُثر، بازده های خوب تا عالی از تیواترها را حاصل می کند. علاوه براین، واکنش تحت شرایط بدون فلز و بدون حلال پیش می رود، بنابراین یک مکمل جالب برای روش های شناخته شده سنتز تیواترها ارائه می دهد. یک مکانیسم ا...
15 صفحه اولCharacterization of bias magnetron sputtered tantalum oxide films for capacitors
Tantalum oxide films have been deposited by sputtering of tantalum target in an oxygen partial pressure of 2x10 mbar under various substrate bias voltages in the range from 0 to -150 V on glass and silicon substrates held at room temperature. The influence of substrate bias voltage on the chemical binding configuration, crystallographic structure, electrical and dielectric properties has been s...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: BUNSEKI KAGAKU
سال: 1963
ISSN: 0525-1931
DOI: 10.2116/bunsekikagaku.12.933